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參數(shù)資料
| 型號(hào)： | AP4543GEM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 119K |
| 代理商： | AP4543GEM-HF |
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
25
m
VGS=4.5V, ID=5A
-
38
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+30
uA
Qg
Total Gate Charge
2
ID=7A
-
7.5
12
nC
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
6
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=20Ω
-
6.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
605
970
pF
Coss
Output Capacitance
VDS=25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.1
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
16
-
nC
2
AP4543GEM-HF
N-CH Electrical Characteristics@ Tj=25
oC(unless otherwise specified)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP4543GMT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance, Fast Switching Performance |
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| AP4563GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4563GH_11 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance |
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