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參數(shù)資料
| 型號： | AP4575GM-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 6 A, 60 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 229K |
| 代理商： | AP4575GM-HF |
AP4575GM-HF
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
0
5
10
15
20
25
30
35
40
0123
4567
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
0
5
10
15
20
25
30
35
40
01
23
456
78
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
60
65
70
75
80
24
68
10
-V GS ,Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =- 3 A
T A =25
o C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =- 4 A
V G =-10V
0.3
0.6
0.8
1.1
1.3
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
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