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參數(shù)資料
| 型號(hào)： | AP4800GYT-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 11.5 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 95K |
| 代理商： | AP4800GYT-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Small Size & Lower Profile
RDS(ON)
13mΩ
▼ RoHS Compliant
ID
13A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
35
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3
10.4
Pulsed Drain Current
1
40
Storage Temperature Range
3.57
-55 to 150
30
+25
13
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
AP4800GYT-HF
Rating
Halogen-Free Product
201009215
1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK
3x3 package is special for DC-DC converters
application and lower 1.0mm profile with backside heat sink.
G
D
S
D
S
G
PMPAK
3x3
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