參數(shù)資料
型號: AP4835GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 3/5頁
文件大?。?/td> 206K
代理商: AP4835GM
AP4835GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
01
23
4
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G =-3.0V
0
10
20
30
40
50
02
46
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
V G =-3.0V
-10V
-7.0V
-5.0V
-4.5V
0.5
0.9
1.3
1.7
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =-9A
V G =-10V
0
2
4
6
8
10
0.1
0.3
0.5
0.7
0.9
1.1
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
-
V
GS(t
h)
(V
)
10
14
18
22
26
30
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =-6A
T A =25
o C
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