參數(shù)資料
型號(hào): AP504
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 放大器
英文描述: 1705 MHz - 1790 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: ROHS COMPLIANT, FM-6
文件頁數(shù): 2/5頁
文件大小: 315K
代理商: AP504
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 April 2007
AP504
DCS-band 4W HBT Amplifier Module
Performance Graphs – Class AB Configuration (AP504-PCB)
The AP504-PCB and AP504 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
Notes:
1. Please note that for reliable operation, the evaluation board will have
to be mounted to a much larger heat sink during operation and in
laboratory environments to dissipate the power consumed by the
device.
The use of a convection fan is also recommended in
laboratory environments. Details of the mounting holes used in the
WJ heatsink are given on the last page of this datasheet.
2. The area around the module underneath the PCB should not contain
any soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on
sequencing should be followed:
1. Connect RF In and Out
2. Connect the voltages and ground pins as shown in the circuit.
3. Apply the RF signal
4. Power down with the reverse sequence
Gain
+25 °C, 12Vcc, Icq=850mA
28
29
30
31
32
33
1700
1720
1740
1760
1780
1800
Frequency (MHz)
Ga
in
(d
B)
Return Loss
+25 °C, Vcc=12V, Icq=850mA
-25
-20
-15
-10
-5
0
1700
1720
1740
1760
1780
1800
Frequency (MHz)
M
a
gnitu
de
(dB
)
S11
S22
Gain vs. Temp
1765 MHz, Vcc=12V, Icq=850mA
26
28
30
32
34
36
-40
-20
0
20
406080
Temperature (°C)
Gain
(dB)
ACPR vs. Output Power vs. Temp
CDMA2000 SR1, 7FA , fc=1765 MHz, Δf=±885 kHz, Vcc=12V, Icq=850mA
-70
-65
-60
-55
-50
18
20
22
24
26
28
Total Output Power (dBm)
AC
PR
(d
Bc
)
-40 °C
+25 °C
+85 °C
ACPR vs. Output Power vs. Temp
CDMA2000 SR1, 7FA , fc=1765 MHz, Δf=±1.98 MHz, Vcc=12V, Icq=850mA
-70
-65
-60
-55
-50
18
20
22
24
26
28
Total Output Power (dBm)
AC
PR
(d
Bc
)
-40 °C
+25 °C
+85 °C
ACPR vs. Frequency vs. Temp
CDMA2000 SR1, 7FA , Δf=±885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA
-70
-65
-60
-55
-50
1750
1760
1770
1780
Frequency (MHz)
A
C
P
R
(d
Bc
)
-40 °C
+25 °C
+85 °C
DNP
0
10
μF
.01
μF
.01
μF
100pF
+
12V
+1
2
V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
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