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參數(shù)資料
| 型號： | AP50T03GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | AP50T03GJ |
AP50T03GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
20
40
60
80
100
01
23
45
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
20
40
60
80
100
012345
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C = 150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
10
20
30
40
50
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =18 A
T C =25
o C
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =25 A
V G =10V
0
8
16
24
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.2
0.7
1.2
1.7
-50
0
50
100
150
T j , Junction Temperature (
o C)
Normalize
d
V
GS(
th)
(V
)
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