參數資料
型號： AP5521GM-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 2.5 A, 100 V, 0.15 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數： 6/7頁
文件大?。?/td> 119K
代理商： AP5521GM-HF
AP5521GM-HF
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
30
-30
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
6
0
4
8
12
16
20
02
468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dra
in
C
u
rre
nt
(A
)
T A =25
o C
-10V
-8.0V
-7.0V
-6.0V
V G = - 5.0V
0
2
4
6
8
10
12
02
468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Dra
in
C
u
rre
nt
(A
)
T A = 150
o C
-10V
-8.0V
-7.0V
-6.0V
V G = - 5.0V
120
130
140
150
160
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS
(ON)
(m
Ω
)
I D = -1 A
T A =25
o C
0.2
0.6
1.0
1.4
1.8
2.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
R
DS
(ON)
I D = -2 A
V G = - 10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rma
li
ze
d
-V
GS
(t
h
)(V
)
相關PDF資料
PDF描述
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