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參數資料
| 型號： | AP55T10GP-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 100 V, 0.0165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數： | 3/4頁 |
| 文件大?。?/td> | 57K |
| 代理商： | AP55T10GP-HF |
AP55T10GP-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
9.0V
8.0V
7.0V
V G = 6.0V
0
20
40
60
80
100
120
04
8
12
16
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
10V
9.0V
8.0V
7.0V
V G = 6.0V
T C = 175
o C
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =40A
V G =10V
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
I D =250uA
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
I D =1mA
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相關代理商/技術參數 |
參數描述 |
|---|---|
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