參數(shù)資料
型號： AP562-F
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 3300 MHz - 3800 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： 6 X 5 MM, GREEN, MO-229VJGC, DFN-14
文件頁數(shù)： 3/8頁
文件大?。?/td> 497K
代理商： AP562-F
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
Phone 1-800-951-4401 FAX: 408-577-6633 e-mail: info-sales@tqs.com Web site: www.TriQuint.com
Page 3 of 8 May 2009
AP562
3.3-3.8 GHz WiMAX 8W Power Amplifier
Typical Device Data
S-Parameters (VCC= +12 V, ICC = 400 mA, 25 °C, unmatched 50 ohm system)
0246
Frequency (GHz)
Gain / Maximum Stable Gain
-20
-10
0
10
20
30
40
Ga
in
(
d
B)
DB(GMax())
AP562
DB(|S(2,1)|)
AP562
0
1.
0
1.0
-1.
0
10
.0
10.0
-1
0.
0
5.
0
5.
0
-5
.0
2.
0
2
.
0
-
2
.
0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.
2
-0
.2
0.
4
0
.
4
-
0
.
4
0.
6
0
.
6
-
0
.
6
0.
8
0
.
8
-
0
.
8
S11
Swp Max
6GHz
Swp Min
0.05GHz
S(1,1)
AP562
0
1.
0
1.0
-1.
0
10
.0
10.0
-1
0.
0
5.
0
5.
0
-5
.0
2.
0
2
.
0
-
2
.
0
3.
0
3.
0
-3
.0
4.
0
4.
0
-4
.0
0.
2
0.
2
-0
.2
0.
4
0
.
4
-
0
.
4
0.
6
0
.
6
-
0
.
6
0.
8
0
.
8
-
0
.
8
S22
Swp Max
6GHz
Swp Min
0.05GHz
S(2,2)
AP562
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that
actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line.
S-Parameters (VCC = +12 V, ICQ = 400 mA, 25 °C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
-0.79
-175.42
27.05
124.23
-41.01
40.51
-1.10
-104.38
100
-0.40
-177.67
22.28
107.37
-41.94
16.01
-1.53
-137.35
300
-0.31
179.53
14.07
90.92
-41.94
2.09
-1.68
-163.78
500
-0.29
177.89
9.72
82.63
-41.62
0.94
-1.77
-171.20
700
-0.29
175.84
6.87
75.39
-41.31
8.79
-1.81
-175.14
900
-0.34
173.80
4.76
69.22
-41.51
0.79
-1.71
-177.04
1100
-0.36
171.63
3.14
62.91
-41.31
-1.63
-178.74
1300
-0.37
168.83
1.85
56.68
-41.31
-5.01
-1.60
179.84
1500
-0.35
165.93
0.86
50.02
-41.31
-8.04
-1.57
178.03
1700
-0.47
161.85
0.96
41.71
-40.35
-13.12
-1.66
174.97
1900
-0.50
158.09
0.45
34.33
-40.35
-18.22
-1.61
172.45
2100
-0.60
154.55
0.05
26.46
-40.18
-24.14
-1.51
170.10
2300
-0.69
150.84
-0.24
17.89
-40.09
-31.86
-1.38
167.43
2500
-0.82
147.61
-0.40
9.26
-39.83
-40.50
-1.28
164.93
2700
-0.94
144.72
-0.44
-0.25
-39.58
-51.10
-1.17
162.74
2900
-1.16
142.23
-0.27
-11.07
-39.33
-65.09
-1.02
160.45
3100
-1.51
140.70
-0.02
-23.54
-38.79
-81.01
-0.81
158.40
3300
-2.02
140.58
0.25
-38.88
-38.06
-102.23
-0.59
156.27
3500
-2.49
142.81
0.36
-58.18
-37.59
-129.91
-0.33
153.91
3700
-2.56
147.66
-0.16
-80.37
-37.20
-160.59
-0.23
150.78
3900
-2.06
151.40
-1.53
-102.11
-37.33
169.42
-0.28
148.13
4100
-1.43
151.78
-3.50
-120.64
-37.79
144.14
-0.40
146.26
4300
-1.01
150.24
-5.66
-135.37
-38.27
122.49
-0.53
145.38
4500
-0.76
148.06
-7.78
-147.04
-38.56
107.83
-0.64
144.44
Device S-parameters are available for download off of the website at: http://www.tqs.com
相關(guān)PDF資料
PDF描述
AP60L02GH 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP60L02GJ 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP60T03GI 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60T10GI-HF 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP60U02GH 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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