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參數(shù)資料
| 型號(hào)： | AP60L02GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | AP60L02GH |
AP60L02GH/J
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
td(on)
tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
5V
QGS
QGD
QG
Charge
0.6x RATED VDS
TO THE
OSCILLOSCOPE
-
+
10V
D
G
S
VDS
VGS
RG
RD
0.8 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
I
D
I
G
1~ 3 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP60L02GJ | 50 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP60T03GI | 45 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60T10GI-HF | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP60U02GH | 40 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP640R1-00 | 18000 MHz - 40000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 1.3 dB INSERTION LOSS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP60L02GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge Simple Drive Requirement |
| AP60L02GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP60L02S | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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