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參數(shù)資料
| 型號： | AP60T10GI-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | AP60T10GI-HF |
AP60T10GI-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
200
024
68
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
9.0V
8.0V
7.0V
V GS =6.0V
0
20
40
60
80
100
02
46
8
10
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10V
9.0V
8.0V
7.0V
V GS =6.0V
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =20A
V G =10V
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
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