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參數(shù)資料
| 型號： | AP60U03GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 124K |
| 代理商： | AP60U03GH |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
40A
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200907071-1/4
Thermal Data
Parameter
Linear Derating Factor
0.2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
Total Power Dissipation
Gate-Source Voltage
±20
Continuous Drain Current
40
Continuous Drain Current
29
Pulsed Drain Current
1
140
Parameter
Rating
Drain-Source Voltage
30
AP60U03GH
25
RoHS-compliant Product
G
D
S
TO-252(H)
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
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