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參數(shù)資料
| 型號： | AP62T02GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 69K |
| 代理商： | AP62T02GH |
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP62T02GH/J
Q
VG
4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
So
urce
Vo
lta
g
e(
V
)
V DS =15 V
V DS =20 V
V DS =2 4 V
I D =30 A
100
1000
10000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
20
40
60
80
100
02468
V GS , Gate-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T j =150
o C
T j =25
o C
V DS =5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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