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參數(shù)資料
| 型號(hào)： | AP62T02GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 48 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | AP62T02GJ |
AP62T02GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
23
46
69
92
115
0.0
2.0
4.0
6.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T C =150
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
30
60
90
120
02
46
V DS , Drain-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.4
0.8
1.2
1.6
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
No
rm
a
lized
R
DS(ON)
I D =30A
V G =10V
10
11
12
13
14
15
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =15A
T C =25 ℃
0
10
20
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C )
No
rm
a
lized
V
GS(t
h)
(V
)
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