參數(shù)資料
型號(hào): AP70L02GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類(lèi): JFETs
英文描述: 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: LEAD FREE PACKAGE-3
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 81K
代理商: AP70L02GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
25V
▼ Simple Drive Requirement
RDS(ON)
9mΩ
▼ Fast Switching
ID
66A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
1.9
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
AP70L02GH/J
Parameter
Rating
Pb Free Plating Product
Drain-Source Voltage
25
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
66
Continuous Drain Current, VGS @ 10V
42
Pulsed Drain Current
1
210
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.53
Storage Temperature Range
Total Power Dissipation
66
-55 to 150
200227032
Thermal Data
Parameter
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GJ) is available for low-profile applications.
± 20
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
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