參數(shù)資料
型號(hào)： AP75N07GW
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 90 A, 75 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, TO-3P, 3 PIN
文件頁數(shù)： 4/4頁
文件大小： 126K
代理商： AP75N07GW
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP75N07GW
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
pF)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
40
80
120
160
02
46
V GS , Gate-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T j =25
o C
V DS =5V
0
2
4
6
8
10
12
14
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
V
GS
,G
ate
to
S
ou
rc
eVoltage
(
V
)
V DS = 40V
V DS =48 V
V DS =60 V
I D = 40A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
ormalize
dT
h
er
mal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
DUTY=0.5
SINGLE PULSE
0.2
T j =150
o C
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