參數(shù)資料
型號(hào)： AP75T10AGP
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 65 A, 105 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 150K
代理商： AP75T10AGP
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
105
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=30A
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
29.3
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=100V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=80V ,VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=30A
-
63
101
nC
Qgs
Gate-Source Charge
VDS=80V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
30
-
nC
td(on)
Turn-on Delay Time
2
VDS=50V
-
18
-
ns
tr
Rise Time
ID=30A
-
74
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
65
-
ns
tf
Fall Time
RD=1.6Ω
-
104
-
ns
Ciss
Input Capacitance
VGS=0V
-
2800 4480
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
250
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=30A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=30A, VGS=0V
-
72
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
180
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP75T10AGP
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
相關(guān)PDF資料
PDF描述
AP75T10GI-HF 42 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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AP80T10AGP-HF 75 A, 100 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP75T10AGP-HF-3TB 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 105V 15MOHM TO-220 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 105V, 15MOHM, TO-220 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 105V, 15MOHM, TO-220, Transistor Polarity:N Channel, Continuous Drain Current Id:65A, Drain Source Voltage Vds:105V, On Resistance Rds(on):0.015ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:138W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 105V, 15MOHM, TO-220, Transistor Polarity:N Channel, Continuous Dra
AP75T10BGP-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP75T10GI-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP75T10GP-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP75T10GS 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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