參數(shù)資料
型號： AP85G33W
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： IGBT 晶體管
英文描述： 85 A, 330 V, N-CHANNEL IGBT
封裝： ROHS COMPLIANT, TO-3P, 3 PIN
文件頁數(shù)： 2/3頁
文件大小： 96K
代理商： AP85G33W
Fig 1. Typical Output Characteristics
Fig 2. Gate Charge Characterisitics
Fig 3. Typical Saturation Voltage
Fig 4. Typical Collector- Emitter Voltage
Characteristics
v.s. Junction Temperature
--
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2/3
AP85G33W
0
30
60
90
120
150
180
02468
V CE , Collector-Emitter Voltage (V)
I
C
,
C
o
llecto
rC
u
rr
en
t(A
)
20V
18V
15V
12V
V GE =10V
T C =25
o C
1
2
3
4
0
40
80
120
160
Junction Temperature (
o C)
V
CE(
sa
t)
,Sa
tura
tio
n
Vo
lta
g
e(
V
)
I C = 100 A
I C =50A
V GE =15 V
0.5
0.8
1.1
1.4
-50
0
50
100
150
Junction Temperature (
o C )
No
rm
a
lized
V
GE
(t
h)
(V
)
0
20
40
60
80
100
120
02
4
V CE , Collector-Emitter Voltage (V)
I
C
,Colle
ct
or
Curre
nt(
A
)
V GE =15V
T C =25 ℃
1
100
10000
1
5
9
13
17
21
25
29
33
V CE , Collector-Emitter Voltage (V)
Capac
it
a
n
ce
(
p
F)
f=1.0MHz
C ies
C oe
C res
T C =150 ℃
0
4
8
12
16
20
0
30
60
90
120
150
Q G , Gate Charge (nC)
V
GE
,
Ga
te
-
E
m
itter
Vo
lta
g
e(
V
)
I C =50A
V CC =100V
V CC =120V
V CC =150V
相關PDF資料
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