參數(shù)資料
型號(hào)： AP86T02GJ-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 4/5頁
文件大?。?/td> 264K
代理商： AP86T02GJ-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Drain-Source On Resistance
4
AP86T02GH/J-HF
100
1000
10000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
4
8
12
16
0
1020
304050
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =10V
V DS =15V
V DS =20V
I D =30A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0
40
80
120
02
46
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =175
o C
T j =25
o C
V DS =5V
0
10
20
30
40
0
20406080
100
I D (A)
R
DS(ON)
(m
Ω
)
10V
4.5V
4.2V
3.8V
3.5V
3.2V
3V
2.8V
相關(guān)PDF資料
PDF描述
AP86T02GH-HF 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP88N30W 48 A, 300 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
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AP9404GH-HF 30 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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