參數(shù)資料
型號： AP86T02GJ
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 1/1頁
文件大?。?/td> 264K
代理商： AP86T02GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
25V
▼ Low On-resistance
RDS(ON)
6mΩ
▼ Fast Switching Characteristic
ID
75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃
/W
Data & specifications subject to change without notice
200808159
AP86T02GH/J
0.5
Parameter
Rating
RoHS-compliant Product
Drain-Source Voltage
25
Total Power Dissipation
75
-55 to 175
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
75
Continuous Drain Current, VGS @ 10V
62
Pulsed Drain Current
1
300
Operating Junction Temperature Range
-55 to 175
Linear Derating Factor
Storage Temperature Range
1
Thermal Data
Parameter
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP86T02GJ) is
available for low-profile applications.
G
D
S
TO-251(J)
G
D S
TO-252(H)
G
D
S
相關PDF資料
PDF描述
AP86T02GH 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP86T03GJ 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP86T03GH 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP90T03GH 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP90T03GJ 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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參數(shù)描述
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