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參數(shù)資料
| 型號(hào)： | AP92U03GS-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 80 A, 30 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | AP92U03GS-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
4.5mΩ
▼ Fast Switching Characteristic
ID
80A
▼ RoHS Compliant & Halogen-Free
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃/W
Rthj-a
40
℃/W
Data & specifications subject to change without notice
AP92U03GS-HF
50
Halogen-Free Product
320
Parameter
Rating
Drain-Source Voltage
30
Total Power Dissipation
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
4
80
Continuous Drain Current, VGS @ 10V
53
Pulsed Drain Current
1
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
201006281
1
Total Power Dissipation
3
3.1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
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