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參數(shù)資料
| 型號： | AP9412BGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 97K |
| 代理商： | AP9412BGM |
AP9412BGM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0
15304560
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =16 V
V DS =20 V
V DS =24 V
I D =14 A
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9412BGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP9412CGM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Ultra_Low On-resistance, Simple Drive Requirement |
| AP9412GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP9412GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Fast Switching Performance, Single Drive Requirement |
| AP9412GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
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