參數(shù)資料
型號(hào)： AP9412GH
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 73 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 64K
代理商： AP9412GH
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=250uA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=40A
-
6
mΩ
VGS=4.5V, ID=30A
-
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
2.5
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
30
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=40A
-
26
42
nC
Qgs
Gate-Source Charge
VDS=24V
-
4.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
10
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=15Ω
-20
-
ns
Ciss
Input Capacitance
VGS=0V
-
2020
3230
pF
Coss
Output Capacitance
VDS=25V
-
450
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
295
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.9
1.35
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=40A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=14A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
29
-
nC
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP9412GH/J
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