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參數(shù)資料
| 型號： | AP9412GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 68 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 118K |
| 代理商： | AP9412GI |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Performance
BVDSS
30V
▼ Single Drive Requirement
RDS(ON)
6mΩ
▼ Full Isolation Package
ID
68A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
43
Pulsed Drain Current
1
250
Total Power Dissipation
34.7
Parameter
Rating
AP9412GI
Continuous Drain Current, VGS @ 10V
200805142
RoHS-compliant Product
1
68
Drain-Source Voltage
30
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
G
D
S
TO-220CFM(I)
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