參數(shù)資料
型號(hào)： AP9431GH-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 23.5 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 4/4頁(yè)
文件大?。?/td> 94K
代理商： AP9431GH-HF
AP9431GH-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
1
10
100
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
2
4
6
8
10
0
4
8
12
16
20
24
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =18A
V DS =44V
0
200
400
600
800
1000
1200
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
相關(guān)PDF資料
PDF描述
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AP9466GH 40 A, 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467GM 12 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
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