參數(shù)資料
型號(hào)： AP9435GH
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 20 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 98K
代理商： AP9435GH
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-10A
-
50
m
VGS=-4.5V, ID=-5A
-
90
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=125
oC) VDS=-24V, VGS=0V
-
-250
uA
IGSS
Gate-Source Leakage
VGS=+ 20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=-10A
-
8
16
nC
Qgs
Gate-Source Charge
VDS=-24V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.3
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
6.3
-
ns
tr
Rise Time
ID=-10A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=1.5Ω
-
7.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
740
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-5A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-10A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9435GH/J
3.Surface mounted on 1 in
2 copper pad of FR4 board
2
相關(guān)PDF資料
PDF描述
AP9466GJ 40 A, 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9466GH 40 A, 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9467GM 12 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9470GM-HF 40 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9479GM-HF 5.6 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9435GJ 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9435GK 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9435GK-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge
AP9435GK-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 50MOHM SOT-223 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SOT-223 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SOT-223, Transistor Polarity:P Channel, Continuous Drain Current Id:-6A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.05ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:2.7W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 50MOHM, SOT-223, Transistor Polarity:P Channel, Continuous Dr
AP9435GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*