參數(shù)資料
型號(hào)： AP9435GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 5.3 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 2/5頁
文件大小： 179K
代理商： AP9435GM
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-5A
-
50
mΩ
VGS=-4.5V, ID=-4A
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=-5.3A
-
14.6
-
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
3.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
6.6
-
ns
tr
Rise Time
ID=-1A
-
7.7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
22
-
ns
tf
Fall Time
RD=15Ω
-
9.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
-
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-2.1A, VGS=0V
-
-1.2
V
t
rr
Reverse Recovery Time
2
IS=-5A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9435GM
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9435GM-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 50MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 50MOHM, SO-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-5.3A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.05ohm, Rds(on) Test Voltage Vgs:-10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, PCH, -30V, 50MOHM, SO-8, Transistor Polarity:P Channel, Continuous Drain
AP9435GP 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Simple Drive Requirement
AP9435K 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9435M 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9440GYT-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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