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參數(shù)資料
| 型號： | AP9435GP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 30 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP9435GP |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9435GP
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS QGD
QG
Charge
10
100
1000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
DC
T C =25
o C
Single Pulse
0
2
4
6
8
10
12
14
0
2
4
6
8
1012
1416
1820
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =-10A
V DS =-24V
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