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參數(shù)資料
| 型號(hào)： | AP9569GH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 14 A, 40 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | AP9569GH-HF |
AP9569GH/J-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
024
68
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
V G = -3.0 V
-10V
-7.0V
-5.0V
-4.5V
60
110
160
210
260
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-6 A
T C =25 ℃
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D =-10A
V G =-10V
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0
10
20
30
02
46
8
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C = 150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9569GJ-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9570 RPL | 制造商:Schneider Electric 功能描述:REPLACEMENT - Bulk |
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