參數(shù)資料
型號: AP9578GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 4/5頁
文件大?。?/td> 180K
代理商: AP9578GM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP9578GM
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
0
4
8
12
16
20
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = - 3 A
V DS = - 48 V
10
100
1000
1
5
9
1317
2125
29
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
The
rmal
Re
sponse
(
R
thja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125
oC/W
t
T
0.02
0.01
0.1
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
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