參數(shù)資料
型號(hào): AP95T10AGP-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 58K
代理商: AP95T10AGP-HF
AP95T10AGP-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
80
160
240
320
0
4
8
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
8.0V
7.0V
6.0V
V GS =5.0V
0
40
80
120
160
04
8
12
16
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 175
o C
10V
8.0V
7.0V
6.0V
V GS =5.0V
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =60A
V G =10V
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
I D =1mA
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