參數(shù)資料
型號(hào): AP98T03GP
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 80 A, 30 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 99K
代理商: AP98T03GP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Ultra-low On-resistance
RDS(ON)
2.8mΩ
▼ Fast Switching Characteristic
ID
200A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.8
/W
Rthj-a
40
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
Total Power Dissipation
156
-55 to 150
200901063
Thermal Data
Parameter
1
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
1.25
Storage Temperature Range
Continuous Drain Current, VGS @ 10V
125
Pulsed Drain Current
1
800
30
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
200
AP98T03GP/S
RoHS-compliant Product
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Parameter
Rating
Drain-Source Voltage
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP98T03GP)
are available for low-profile applications.
G
D
S
TO-263(S)
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