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參數(shù)資料
| 型號(hào)： | AP9930AGM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 V, 0.035 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | AP9930AGM |
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
VGS=10V, ID=5A
-
35
m
VGS=4.5V, ID=3A
-
60
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=5A
-
6.3
10
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
6
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-15
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=25V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.2A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=5A, VGS=0V
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
8
-
nC
Static Drain-Source On-Resistance
2
RDS(ON)
2
AP9930AGM
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