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參數(shù)資料
| 型號： | AP9936GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大小： | 202K |
| 代理商： | AP9936GM |
Fig7. Gate Charge Characteristics
Fig 8 . Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9936GM
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
er
m
al
R
espon
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135
oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
2
4
6
8
10
12
02468
10
12
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
10
100
1000
1
8
15
22
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
td(on)
tr
td(off) t
f
VDS
VGS
10%
90%
Q
VG
5V
QGS
QGD
QG
Charge
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T A =25
o C
Single Pulse
1s
1ms
10ms
100ms
DC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9936GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DC-DC Application, Dual N-channel Device, Surface Mount Package |
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| AP9938AGEY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Low On-resistance, Surface Mount Package |
| AP9938GEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9938GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application |
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