參數(shù)資料
型號: AP9960GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 42 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 3/4頁
文件大?。?/td> 71K
代理商: AP9960GH
AP9960GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
50
100
150
200
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =25
o C
V G =4.0V
10V
8.0V
6.0V
0
10
20
30
40
50
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
ΩΩΩΩ
)
I D =20A
T C =25
0.5
1.0
1.5
2.0
2.5
-50
25
100
175
T j , Junction Temperature (
o C )
V
GS(
th)
(V
)
0.6
1.0
1.4
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =20A
V G =10V
0
40
80
120
01
234
56
V DS , Drain-to-Source Voltage (V)
I
D
,
Drain
Cu
rre
n
t(A)
T C =150
o C
V G =4.0V
10V
8.0V
6.0V
0
1
10
100
0.0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
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