參數(shù)資料
型號: AP9962AGD
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 7 A, 40 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù): 2/5頁
文件大?。?/td> 163K
代理商: AP9962AGD
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=7A
-
25
m
VGS=4.5V, ID=5A
-
40
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=32V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V
-
+100
nA
Qg
Total Gate Charge
2
ID=7A
-
12
20
nC
Qgs
Gate-Source Charge
VDS=32V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.4
-
nC
td(on)
Turn-on Delay Time
2
VDS=20V
-
8
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=20Ω
-
5.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
820
1350
pF
Coss
Output Capacitance
VDS=25V
-
95
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
Is=7A,
VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3. Mounted on 1 in
2 copper pad of FR4 board ;90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9962AGD
相關PDF資料
PDF描述
APD1512-244ST01 2400 MHz - 2484 MHz MOBILE STATION ANTENNA, 2.1 dBi GAIN
APD1512-244ST02 2400 MHz - 2484 MHz MOBILE STATION ANTENNA, 2.1 dBi GAIN
APDM928M MOBILE STATION ANTENNA
APDM928T MOBILE STATION ANTENNA
APDM928U MOBILE STATION ANTENNA
相關代理商/技術參數(shù)
參數(shù)描述
AP9962AGH 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9962AGJ-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9962AGM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9962AGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9962AGP 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET