參數(shù)資料
型號(hào): AP9962M
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 75K
代理商: AP9962M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Single Drive Requirement
Surface Mount Package
BV
DSS
R
DS(ON)
I
D
40V
25m
Ω
7A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
62.5
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
0.016
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1,2
5.5
20
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
7
Parameter
Rating
40
Drain-Source Voltage
200407031
AP9962M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
±20
S1G1S2
G2
D1
D1D2
D2
SO-8
G2
D2
S2
G1
D1
S1
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