參數(shù)資料
型號: AP9971AGH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 22 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/5頁
文件大小: 231K
代理商: AP9971AGH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower On-resistance
RDS(ON)
36mΩ
▼ Fast Switching Characteristic
ID
22A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
200807022
1
AP9971AGH/J
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
22
Continuous Drain Current, VGS @ 10V
14
Pulsed Drain Current
1
80
Total Power Dissipation
34.7
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9971AGJ)
are available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
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