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參數(shù)資料
| 型號(hào)： | AP9971GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 23 A, 60 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 121K |
| 代理商： | AP9971GI |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.05
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=18A
-
36
mΩ
VGS=4.5V, ID=12A
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
17
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=60V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=48V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=18A
-
18
30
nC
Qgs
Gate-Source Charge
VDS=48V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
9
-
ns
tr
Rise Time
ID=18A
-
24
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
26
-
ns
tf
Fall Time
RD=1.67Ω
-7
-
ns
Ciss
Input Capacitance
VGS=0V
-
1700
2700
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=25A, VGS=0V
-
1.2
V
t
rr
Reverse Recovery Time
2
IS=18A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
38
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9971GI
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP9971GI-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9971GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9971GM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9971GM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9972AGI | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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