參數(shù)資料
型號(hào): AP9972GH-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 94K
代理商: AP9972GH-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower Gate Charge
RDS(ON)
18mΩ
▼ Fast Switching Characteristic
ID
60A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
/W
Rthj-a
62.5
/W
Data and specifications subject to change without notice
201010052
1
AP9972GH-HF
Halogen-Free Product
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
60
Continuous Drain Current, VGS @ 10V
38
Pulsed Drain Current
1
230
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
89.3
-55 to 150
Operating Junction Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
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