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參數(shù)資料
| 型號： | AP9973GD |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | AP9973GD |
AP9973GD
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0
5
10
15
20
25
30
35
40
01234
5678
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
V G =3.0V
T A =25
o C
10V
6.0V
5.0V
4.5V
0
5
10
15
20
25
30
012
3456
7
8
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
V G =3.0V
10V
6.0V
5.0V
4.5V
70
75
80
85
90
95
35
79
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =3.9A
T A =25
o C
0.0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =10V
I D =3.9A
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.5
1
1.5
2
2.5
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS(t
h)
(V
)
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| AP9973GM | 3.9 A, 60 V, 0.08 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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| AP9973GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9973GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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