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參數(shù)資料
| 型號(hào)： | AP9980GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 80 V, 0.052 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 209K |
| 代理商： | AP9980GM |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
80V
▼ Single Drive Requirement
RDS(ON)
52mΩ
▼ Surface Mount Package
ID
4.6A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Continuous Drain Current
3, V
GS @ 10V
2.9
Pulsed Drain Current
1
30
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
4.6
Parameter
Rating
Drain-Source Voltage
80
RoHS-compliant Product
1
AP9980GM
200808191
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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