參數(shù)資料
型號： AP9987GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 3.5 A, 80 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 1/5頁
文件大?。?/td> 208K
代理商： AP9987GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
80V
▼ Single Drive Requirement
RDS(ON)
90mΩ
▼ Surface Mount Package
ID
3.5A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance Junction-ambient
3
62.5
℃
/W
Data and specifications subject to change without notice
RoHS-compliant Product
1
AP9987GM
200811062
Parameter
Rating
Drain-Source Voltage
80
Gate-Source Voltage
+25
Continuous Drain Current
3, V
GS @ 10V
3.5
Continuous Drain Current
3, V
GS @ 10V
2.8
Pulsed Drain Current
1
30
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
相關PDF資料
PDF描述
AP9997AGH-HF 8.8 A, 120 V, 0.185 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP9997GH-HF 11 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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