參數(shù)資料
型號: AP99T06GP
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 120 A, 60 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 93K
代理商: AP99T06GP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower On-resistance
RDS(ON)
4.2mΩ
▼ Fast Switching Characteristic
ID
120A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
/W
Data and specifications subject to change without notice
200907092
1
AP99T06GP
-55 to 175
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
3
120
Continuous Drain Current (Chip)
190
Continuous Drain Current, VGS @ 10V
3
120
Pulsed Drain Current
1
480
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
300
-55 to 175
Operating Junction Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
through-hole applications.
G
D
S
TO-220(P)
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