參數(shù)資料
型號(hào): APL501J
廠商: Advanced Power Technology Ltd.
英文描述: N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: N溝道增強(qiáng)型高壓功率MOSFET
文件頁數(shù): 3/4頁
文件大?。?/td> 114K
代理商: APL501J
I
D
,
R
D
(
I
D
,
I
D
,
(
C
V
G
(
B
D
(
R
D
(
(
V
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (°C)
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
T
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VD250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25°C
TJ = -55°C
TJ = +125°C
TJ = +125°C
TJ = +25°C
TJ = -55°C
VGS=10V
VGS=20V
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
Crss
Coss
Ciss
0
2
4
6
8
0
20
40
60
80
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125
150
-50
-25
0
25
50
75
100 125 150
1
5
10
50 100
500
.01
.1
1
10
50
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
40
30
20
10
0
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
175
100
50
10
5
1
.5
.1
APL501J
OPERATION HERE
LIMITED BY R
DS
(ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
100μS
1mS
10mS
100mS
DC
0
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