參數(shù)資料
型號(hào): APL502L
廠(chǎng)商: MICROSEMI POWER PRODUCTS GROUP
元件分類(lèi): JFETs
英文描述: 58 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 139K
代理商: APL502L
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
All Ratings: T
C = 25°C unless otherwise specied.
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5896
Rev
E
2-2010
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250 μA)
On State Drain Current 2 (V
DS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (V
GS = 12V, 29A)
Zero Gate Voltage Drain Current (V
DS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 2.5mA)
MIN
TYP
MAX
500
58
0.09
25
250
±100
2
4
UNIT
Volts
Amps
Ohms
μA
nA
Volts
Symbol
BV
DSS
I
D(ON)
R
DS(ON)
I
DSS
I
GSS
V
GS(TH)
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
Higher FBSOA
Higher Power Dissipation
Popular T-MAX or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL502B2_L (G)
500
58
232
±30
±40
730
5.84
-55 to 150
300
58
50
3000
T-Max
TM
TO-264
G
D
S
Microsemi Website - http://www.microsemi.com
APL502B2(G)
APL502L(G)
500V, 58A, 0.090
Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
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