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參數(shù)資料
| 型號： | APM4461 |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強型MOS管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 568K |
| 代理商： | APM4461 |
Copyright ANPEC Electronics Corp.
Rev. A.2 - May., 2003
APM4461
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
I
DM
Maximum Drain Current – Pulsed
-25
A
T
A=25 C
2.5
P
D
Maximum Power Dissipation
T
A=100 C
1.0
W
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-55 to 150
C
R
θJA
Thermal Resistance – Junction to Ambient
50
C/W
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Absolute Maximum Ratings (Cont.) (T
A = 25°C unless otherwise noted)
APM4461
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown Voltage V
GS=0V , IDS=-250A
-20
V
I
DSS
Zero Gate Voltage Drain Current V
DS=-24V , VGS=0V
-1
A
V
GS(th)
Gate Threshold Voltage
V
DS=VGS , IDS=-250
A
-0.6
-1.5
V
I
GSS
Gate Leakage Current
V
GS=
±20V , VDS=0V
±100
nA
V
GS=-10V , IDS=-7A
25
35
V
GS=-4.5V , IDS=-4A
35
50
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS=-2.5V , IDS=-2A
55
65
m
[
V
SD
a
Diode Forward Voltage
I
SD=-2A, VGS=0V
-0.7
-1.3
V
Dynamicb
Q
g
Total Gate Charge
17.8
21
Q
gs
Gate-Source Charge
4
Q
gd
Gate-Drain Charge
V
DS=-10V , VGS=-4.5V,
I
DS=-2A
5.2
nC
t
d(ON)
Turn-on Delay Time
10
15
T
r
Turn-on Rise Time
15
20
t
d(OFF)
Turn-off Delay Time
32
26
T
f
Turn-off Fall Time
V
DD=-10V , IDS=-2A ,
V
GEN=-4.5 V , RG=0.2
15
25
ns
C
iss
Input Capacitance
1240
C
oss
Output Capacitance
340
C
rss
Reverse Transfer Capacitance
V
GS=0V
V
DS=-15V
Frequency=1.0MHz
216
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
≤ 500s, duty cycle ≤ 2%
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