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參數(shù)資料
| 型號(hào)： | APT1001R1BN |
| 元件分類： | JFETs |
| 英文描述： | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | APT1001R1BN |
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
TO-247AD Package Outline
050-0007
Rev
C
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2-Plcs.
0
.5
1.0
1.5
2.0
0
10
20
30
40
50
0
40
80
120
160
200
10,000
1,000
100
10
100
50
20
10
5
2
1
20
16
12
8
4
0
C
iss
C
oss
C
rss
T
J
= +150
°C
T
J
= +25
°C
V
DS
=200V
V
DS
=100V
V
DS
=500V
APT1001R1/1001R3BN
I
D
= I
D
[Cont.]
1
5
10
50 100
1000
T
C
=+25
°C
T
J
=+150
°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
1mS
10mS
100mS
DC
100
S
10
S
APT1001R1BN
APT1001R3BN
APT1001R1BN
APT1001R3BN
APT1001R1/1001R3BN
60
10
1
.1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1001R3BN | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT1001R1HVR | 8.4 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT1001R1SN | 10.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1001R3BN-BUTT | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001R3BN-GULLWING | 10 A, 1000 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1001R1BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD |
| APT1001R1BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1001R1DN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT1001R1HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO |
| APT1001R1HVR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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