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參數(shù)資料
| 型號(hào)： | APT1001R1HVR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | LJT 43C 40#20 4#16 2#8(COAX) |
| 中文描述： | 電源MOS V是一個(gè)高電壓N新一代通道增強(qiáng)型功率MOSFET。 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | APT1001R1HVR |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
1
5
10
50 100
5001000
.01
.1
1
10
50
0
50
100
150
200
250
300
0.2
0.4
0.6
0.8
1.0
1.2
APT1001R1AVR
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
40
10
5
1
.5
.1
20
16
12
8
4
0
11,000
5,000
1,000
500
100
50
50
10
5
1
.5
.1
0
OPERATION HERE
LIMITED BY R
DS
(ON)
10
μ
S
TJ =+150
°
C
TJ =+25
°
C
Crss
Coss
Ciss
VDS=200V
VDS=100V
VDS=500V
1mS
10mS
100mS
DC
100
μ
S
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
5,256,583
I
D
= I
D
[Cont.]
TO-3 (TO-204AE) Package Outline
22.23 (.875) Max.
6.35 (.250)
9.15 (.360)
Drain
(Case)
Source
Dimensions in Millimeters and (Inches)
Seating
Plane
7.92 (.312)
12.70 (.500)
1.52 (.060)
3.43 (.135)
1.47 (.058)
1.60 (.063)
(2-Places)
16.64 (.655)
17.15 (.675)
29.90 (1.177)
30.40 (1.197)
38.61 (1.52)
39.12 (1.54)
25.15 (0.990)
26.67 (1.050)
10.67 (.420)
11.18 (.440)
5.21 (.205)
5.72 (.225)
3.84 (.151)
4.09 (.161)
(2-Places)
Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT1001 | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
| APT1001RBLC | Circular Connector; No. of Contacts:56; Series:MS27656; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No |
| APT1001RBN | LJT 56C 48#20 8#16 PIN RECP |
| APT1001RBVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT1001RSLC | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1001R1SN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB |
| APT1001R2AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3 |
| APT1001R2BN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD |
| APT1001R2HN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM |
| APT1001R3AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3 |
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