- 您現在的位置：買賣IC網 > PDF目錄36700 > APT1001R6BLL 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PDF資料下載
參數資料
| 型號： | APT1001R6BLL |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數： | 2/4頁 |
| 文件大小： | 69K |
| 代理商： | APT1001R6BLL |
APT1001R6BLL/SLL
050-7134
Rev
-
3-2003
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
DYNAMIC CHARACTERISTICS
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.47
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
VDD = 500V
ID = 8A @ 25°C
V
GS
= 15V
VDD = 500V
S
ID = 8A @ 25°C
RG = 0.6
MIN
TYP
MAX
1322
230
42
53
7
35
18
32
19
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -8A)
Reverse Recovery Time (I
S
= -8A, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -8A, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
8
32
1.3
630
6.1
10
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 13.28mH, RG = 25, Peak IL = 8A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-I
D
8A di
/dt ≤ 700A/s V
R ≤
V
DSS
T
J ≤
150
°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關PDF資料 |
PDF描述 |
|---|---|
| APT1001RBN-BUTT | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901RBN-GULLWING | 11 A, 900 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001RBN-GULLWING | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT901RBN-BUTT | 11 A, 900 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| APT1001RBN | 11 A, 1000 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
相關代理商/技術參數 |
參數描述 |
|---|---|
| APT1001R6BN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1001R6SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT1001R6SFLLG | 功能描述:MOSFET N-CH 1000V 8A D3PAK RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1001RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3 |
| APT1001RBLC | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
發(fā)布緊急采購，3分鐘左右您將得到回復。